RoHS
COMPLIANT
YJQD3622A
N-Channel and N-Channel Complementary MOSFET
Product Summary
NMOS(Die1)
● VDS
30V
● ID
30A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
NMOS(Die2)
● VDS
<10mΩ
<19.5mΩ
30V
● ID
40A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<6.5mΩ
<15mΩ
General Description
● Dual Asymmetric N-Channel
● High Current Capability
● Low Gate Charge
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
●DC/DC Converters in Computing, Servers
● Isolated DC/DC Converters in Telecom and
Industrial
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
NMOS(Die1)
NMOS(Die2)
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
30
±20
9
30
±20
11
VGS
V
TA=25℃
5
7
TA=100℃
TC=25℃
Drain Current
ID
A
30
40
19
25
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
120
42.2
1.56
0.62
17.3
6.9
160
60
A
EAS
mJ
1.66
0.66
20.8
8.3
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Total Power Dissipation C
PD
W
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
-55~+150
℃
■Thermal resistance
NMOS(Die1)
NMOS(Die2)
Parameter
Symbol
Units
Typ
Max
Typ
Max
75
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
RθJA
RθJC
67
6
80
62
5
℃/W
7.2
6
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJQD3622A
F1
QD3622A
5000
10000
100000
13“ reel
1 / 10
S-E476
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,7-Dec-23