Datasheet > YJQD3622A

YJQD3622A

更新时间： 2024-04-09 19:01:52

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	615K
描述
DFN3030-8L-Dual

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YJQD3622A 数据手册

RoHS

COMPLIANT

YJQD3622A

N-Channel and N-Channel Complementary MOSFET

Product Summary

NMOS(Die1)

● V_DS

30V

● I_D

30A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

NMOS(Die2)

● V_DS

＜10mΩ

＜19.5mΩ

30V

● I_D

40A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜6.5mΩ

＜15mΩ

General Description

● Dual Asymmetric N-Channel

● High Current Capability

● Low Gate Charge

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

●DC/DC Converters in Computing, Servers

● Isolated DC/DC Converters in Telecom and

Industrial

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

NMOS(Die1)

NMOS(Die2)

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

±20

V_GS

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

120

42.2

1.56

0.62

17.3

6.9

160

EAS

1.66

0.66

20.8

8.3

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

NMOS(Die1)

NMOS(Die2)

Parameter

Symbol

Units

Typ

Max

Typ

Max

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

R_θJA

R_θJC

℃/W

7.2

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJQD3622A

QD3622A

5000

10000

100000

13“ reel

1 / 10

S-E476

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,7-Dec-23

12 3 4 5 6 7...10

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