RoHS
COMPLIANT
YJQ69G04H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
69A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
<5.7mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
13.5
9.5
V
TA=25℃
TA=100℃
TC=25℃
Drain Current
ID
A
69
48
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
276
81
A
EAS
mJ
2.3
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.1
Total Power Dissipation C
PD
W
42
21
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
55
Max
65
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.8
3.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ69G04H
F1
Q69G04H
5000
10000
100000
13“ reel
1 / 8
S-E472
Rev.1.0,16-Nov-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com