RoHS
COMPLIANT
YJQ50P03B
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-30V
● ID
-50A
● RDS(ON)( at VGS=-20V)
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<9.5mΩ
<11mΩ
<19mΩ
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Power management
● Load switch
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
-30
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±2 5
V
-9.8
TA=25℃
-6.2
TA=100℃
TC=25℃
Drain Current
ID
A
-50
-31
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
-200
95.2
1.9
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.76
46
Total Power Dissipation C
PD
W
18
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
55
Max
65
Units
Thermal Resistance Junction-to-Ambient D
Steady-State
Steady-State
℃/W
Thermal Resistance Junction-to-Case
RθJC
2.2
2.7
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ50P03B
F1
Q50P03B
5000
10000
100000
13’’ reel
1 / 7
S-E471
Rev.1.0,16-Nov-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com