Datasheet > YJQD12N03A

YJQD12N03A

更新时间： 2024-11-03 17:00:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	671K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQD12N03A 数据手册

RECOMMEND

YJQD12N03B

FOR NEW DESIGN

RoHS

COMPLIANT

YJQD12N03A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

DFN3.3X3.3

30 V

● I_D

12 A

● R_DS(ON)( at V_GS= 10V)

＜16 mohm

● R_DS(ON)( at V_GS= 4.5V)

● 100% UIS Tested

● 100% ▽VDS Tested

＜30 mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

Applications

● High current load applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

T_C=100℃

7.6

Pulsed Drain Current ^A

I_DM

Single Pulse Avalanche Energy ^B

Total Power Dissipation

E_AS

T_C=25℃

P_D

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-ambient

Junction and Storage Temperature Range

R_θJC

R_θJA

6.0

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJQD12N03A

Q12N03A

5000

10000

100000

13“ reel

1 / 7

S-E670

Rev.1.1,27-Feb-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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