Datasheet > YJQ70G06AQ

YJQ70G06AQ

更新时间： 2024-11-03 17:00:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	310K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQ70G06AQ 数据手册

RoHS

COMPLIANT

YJQ70G06AQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

70A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

＜5.5mΩ

＜9.5mΩ

General Description

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

● 12V and 24V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

T_C=100℃

T_A=25℃

Drain Current

I_D

9.6

T_A=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

270

144

EAS

T_C=25℃

T_C=100℃

T_A=25℃

Total Power Dissipation ^C

P_D

2.9

1.4

T_A=100℃

Steady-State

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient ^D

Junction and Storage Temperature Range

R_θJC

R_θJA

1.56

℃/W

℃

T_J,T_STG

-55～+175

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJQ70G06AQ

Q70G06A

5000

10000

100000

13“ reel

1 / 7

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-D304

Rev.1.0,28-Jun-23

12 3 4 5 6 7

中文翻译

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