RoHS
COMPLIANT
YJQD25N04A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
DFN3.3X3.3
40 V
● ID
25 A
● RDS(ON)( at VGS= 10V)
<19 mohm
● RDS(ON)( at VGS= 4.5V)
● 100% UIS Tested
● 100% ▽VDS Tested
<25 mohm
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● High current load applications
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
40
±20
25
V
V
TC=25℃
Drain Current
ID
A
TC=100℃
16
Pulsed Drain Current A
IDM
100
A
mJ
Single Pulse Avalanche Energy B
Total Power Dissipation
EAS
70
TC=25℃
PD
21
W
Thermal Resistance Junction-to-Case
RθJC
6.0
℃/ W
℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJQD25N04A
F1
QD25N04A
5000
10000
100000
13“ reel
1 / 7
S-E665
Rev.1.0,04-Nov-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com