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YJQD25N04A PDF预览

YJQD25N04A

更新时间: 2024-11-21 15:19:19
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
7页 1132K
描述
DFN3333-8L

YJQD25N04A 数据手册

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RoHS  
COMPLIANT  
YJQD25N04A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
DFN3.3X3.3  
40 V  
● ID  
25 A  
● RDS(ON)( at VGS= 10V)  
19 mohm  
● RDS(ON)( at VGS= 4.5V)  
● 100% UIS Tested  
● 100% VDS Tested  
25 mohm  
General Description  
● Trench Power LV MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
Applications  
● High current load applications  
● Load switching  
● Hard switched and high frequency circuits  
● Uninterruptible power supply  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
40  
±20  
25  
V
V
TC=25℃  
Drain Current  
ID  
A
TC=100℃  
16  
Pulsed Drain Current A  
IDM  
100  
A
mJ  
Single Pulse Avalanche Energy B  
Total Power Dissipation  
EAS  
70  
TC=25℃  
PD  
21  
W
Thermal Resistance Junction-to-Case  
RθJC  
6.0  
/ W  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
YJQD25N04A  
F1  
QD25N04A  
5000  
10000  
100000  
13“ reel  
1 / 7  
S-E665  
Rev.1.0,04-Nov-20  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com