RoHS
COMPLIANT
YJQ62G06A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID (Silicon limited)
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
62A
<7.5 mohm
<10 mohm
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
● Industrial and Motor Drive application
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
60
±20
12
VGS
V
TA=25℃
TA=100℃
TC=25℃
7.5
Drain Current (Silicon limited)
Pulsed Drain Current A
ID
A
62
TC =100℃
39
IDM
186
162
2.2
A
B
Avalanche energy
EAS
mJ
TA=25℃
0.9
TA=100℃
TC=25℃
TC =100℃
Total Power Dissipation C
PD
W
45
18
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
18
Max
22
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
Steady-State
Steady-State
45
55
℃/W
RθJC
2.3
2.8
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJQ62G06A
F1
Q62G06
5000
10000
100000
13“ reel
1 / 6
S-E138
Rev.1.2,14-Jul-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com