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YJQ65N03A PDF预览

YJQ65N03A

更新时间: 2024-11-03 17:01:03
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
8页 787K
描述
PDFN3333-8L

YJQ65N03A 数据手册

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RoHS  
COMPLIANT  
YJQ65N03A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
30V  
● ID  
65A  
● RDS(ON)( at VGS=10V)  
● RDS(ON)( at VGS=4.5V)  
● 100% EAS Tested  
● 100% VDS Tested  
5mΩ  
8mΩ  
General Description  
● Trench Power LV MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
● Moisture Sensitivity Level 1  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
● High current load applications  
● Load switching  
● Hard switched and high frequency circuits  
● Uninterruptible power supply  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
30  
VGS  
±20  
V
14  
TA=25℃  
9
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
65  
41  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
200  
A
EAS  
112  
mJ  
2
0.8  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
Total Power Dissipation C  
PD  
W
50  
20  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
50  
2
Max  
60  
Units  
Thermal Resistance Junction-to-Ambient D  
Steady-State  
Steady-State  
/W  
Thermal Resistance Junction-to-Case  
RθJC  
2.5  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJQ65N03A  
F1  
Q65N03A  
5000  
10000  
100000  
13“ reel  
1 / 8  
S-E376  
Rev.1.0,27-Jul-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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