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YJQD12N03B PDF预览

YJQD12N03B

更新时间: 2024-11-03 17:01:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
8页 707K
描述
DFN3333-8L-Dual

YJQD12N03B 数据手册

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RoHS  
COMPLIANT  
YJQD12N03B  
N-Channel and N-Channel Complementary MOSFET  
Product Summary  
VDS  
30V  
ID  
12A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
20mΩ  
41mΩ  
General Description  
Trench Power LV MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
High current load applications  
Uninterruptible power supply  
Load switching  
Hard switched and high frequency circuits  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
30  
VGS  
±20  
V
6.5  
TA=25  
4
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
12  
7.6  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
48  
A
EAS  
16  
mJ  
1.6  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
0.6  
Total Power Dissipation C  
PD  
W
15  
6
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
60  
Max  
75  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
6.6  
8
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJQD12N03B  
F1  
QD12N03B  
5000  
10000  
100000  
13reel  
1 / 8  
S-E470  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.0,8-Dec-23