Datasheet > YJG95G06B

YJG95G06B

更新时间： 2024-09-24 17:01:55

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	896K
描述
PDFN5060-8L

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中文翻译

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数据手册

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YJG95G06B 数据手册

RoHS

COMPLIANT

YJG95G06B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

95A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜2.9 mohm

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

● Synchronous-rectification applications

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

155

Drain Current （Silicon limited）

I_D

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Drain Current ^A

I_D

Pulsed Drain Current ^B

Avalanche energy ^C

I_DM

EAS

390

800

120

1.04

Total Power Dissipation ^D

P_D

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient ^E

Junction and Storage Temperature Range

R_θJC

R_θJA

℃/ W

T_J,T_STG

-55～+150

℃

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJG95G06B

5000

10000

100000

13“ reel

1 / 7

S-E416

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.3.3,24-Oct-23

12 3 4 5 6 7

中文翻译

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