Datasheet > YJH03N06B

YJH03N06B

更新时间： 2024-09-26 15:18:55

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	523K
描述
SOT-89

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中文翻译

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数据手册

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YJH03N06B 数据手册

RoHS

COMPLIANT

YJH03N06B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

3.5A

● R_DS(ON)( at V_GS= 10V)

＜100mohm

● R_DS(ON)( at V_GS= 4.5V)

● R_DS(ON)( at V_GS= 2.5V)

＜120mohm

＜200mohm

General Description

● Trench Power LV MOSFET technology

● High Density Cell Design for Low R_DS(ON)

● High Speed switching

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±16

3.5

T_A=25℃

T_A=70℃

Drain Current

I_D

2.8

Pulsed Drain Current ^A

I_DM

P_D

1.7

Total Power Dissipation @ T_A=25℃ Steady State

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

6003

DELIVERY MODE

7“ reel

CODE

1000

10000

8000

40000

32000

YJH03N06B

6003

1000

7“ reel

1 / 7

S-E663

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.3.1,3-Nov-22

12 3 4 5 6 7

中文翻译

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