Datasheet > YJJ03G10A

YJJ03G10A

更新时间： 2024-11-19 15:17:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	1311K
描述
SOT-23-6L

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中文翻译

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数据手册

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YJJ03G10A 数据手册

RoHS

COMPLIANT

YJJ03G10A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

110V

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜140 mohm

＜250 mohm

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low _RDS(ON)

Applications

● DC-DC Converters

● Power management functions

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

110

V_GS

±20

T_A=25℃

T_A=70℃

Drain Current

I_D

2.4

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

1.5

T_A=25℃

T_A=70℃

Total Power Dissipation ^C

P_D

1.0

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Ambient ^{D E}

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

100

℃/W

R_θJL

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJJ03G10A

G1003

3000

30000

120000

7”Reel

1 / 6

S-E069

Rev.3.0,10-Apr-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

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