Datasheet > YJGD40N03A

YJGD40N03A

更新时间： 2024-11-22 15:18:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	569K
描述
DFN5060-8L

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中文翻译

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数据手册

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YJGD40N03A 数据手册

RoHS

COMPLIANT

YJGD40N03A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

NMOS (Die1)

● V_DS

30V

● I_D

40A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

NMOS (Die2)

●V_DS

＜9.2mohm

＜14.5mohm

30V

● I_D

40A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜9.2mohm

＜14.5mohm

● 100% UIS Tested

● 100% ▽VDS Tested

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

Applications

● High current load applications

● Load switching

● Hard switched and high frequency circuits

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

N-Die1

N-Die2

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

Drain Current

V_GS

±20

T_C=25℃

I_D

T_C=100℃

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

140

T_C=25℃

T_C=100℃

T_A=25℃

P_D

8.4

P_D

E_AS

Single Pulse Avalanche Energy ^B

℃/ W

℃

Thermal Resistance Junction-to-Case ^C

Thermal Resistance Junction-to-Ambient ^C

Junction and Storage Temperature Range

R_θJC

R_θJA

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJGD40N03A

5000

10000

100000

13“ reel

1 / 6

S-E162

Rev.1.0, 04-Sep-21

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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