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YJGD30N04A PDF预览

YJGD30N04A

更新时间: 2024-11-19 17:00:51
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
8页 738K
描述
PDFN5060-8L-Dual

YJGD30N04A 数据手册

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RoHS  
COMPLIANT  
YJGD30N04A  
N-Channel and N-Channel Complementary MOSFET  
Product Summary  
VDS  
40V  
ID  
30A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
13mΩ  
20mΩ  
General Description  
Trench Power MV MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
Power switching application  
Uninterruptible power supply  
DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
40  
VGS  
±20  
V
8
TA=25  
5
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
30  
19  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
120  
A
EAS  
42  
mJ  
2
0.8  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
Total Power Dissipation C  
PD  
W
35  
14  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
50  
Max  
60  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
2.8  
3.5  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJGD30N04A  
F1  
YJGD30N04A  
5000  
10000  
100000  
13reel  
1 / 8  
S-E351  
Rev.1.0,01-Jun-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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