RoHS
COMPLIANT
YJGD40N03B
N-Channel and N-Channel Complementary MOSFET
Product Summary
● VDS
30V
● ID
40A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<8.5mΩ
<14mΩ
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● High current load applications
● Hard switched and high frequency circuits
● Load switching
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
30
VGS
±20
V
11
TA=25℃
7
TA=100℃
TC=25℃
Drain Current
ID
A
40
25
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
140
A
EAS
56
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
50
Total Power Dissipation C
PD
W
20
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
2
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJGD40N03B
F1
YJGD40N03B
5000
10000
100000
13“ reel
1 / 8
S-E391
Rev.1.0,28-Aug-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com