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YJGD40N03B PDF预览

YJGD40N03B

更新时间: 2024-11-19 15:19:39
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
8页 828K
描述
PDFN5060-8L

YJGD40N03B 数据手册

 浏览型号YJGD40N03B的Datasheet PDF文件第2页浏览型号YJGD40N03B的Datasheet PDF文件第3页浏览型号YJGD40N03B的Datasheet PDF文件第4页浏览型号YJGD40N03B的Datasheet PDF文件第5页浏览型号YJGD40N03B的Datasheet PDF文件第6页浏览型号YJGD40N03B的Datasheet PDF文件第7页 
RoHS  
COMPLIANT  
YJGD40N03B  
N-Channel and N-Channel Complementary MOSFET  
Product Summary  
VDS  
30V  
ID  
40A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
8.5mΩ  
14mΩ  
General Description  
● Trench Power LV MOSFET technology  
● Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
High current load applications  
● Hard switched and high frequency circuits  
Load switching  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
30  
VGS  
±20  
V
11  
TA=25  
7
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
40  
25  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
140  
A
EAS  
56  
mJ  
2.5  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
1
50  
Total Power Dissipation C  
PD  
W
20  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
40  
2
Max  
50  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
2.5  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJGD40N03B  
F1  
YJGD40N03B  
5000  
10000  
100000  
13reel  
1 / 8  
S-E391  
Rev.1.0,28-Aug-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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