Datasheet > YJGD03N10A

YJGD03N10A

更新时间： 2024-09-24 15:19:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	713K
描述
DFN5060-8L

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中文翻译

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数据手册

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YJGD03N10A 数据手册

RoHS

COMPLIANT

YJGD03N10A

N-Channel and N-Channel Complementary MOSFET

Product Summary

● V_DS

100V

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

＜260mΩ

＜270mΩ

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Fast Switching Speed

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● DC-DC convertor

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

100

±20

T_A=25℃

0.6

T_A=100℃

T_C=25℃

Drain Current

I_D

1.9

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

1.6

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.6

Total Power Dissipation ^C

P_D

14.7

5.8

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

8.5

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJGD03N10A

5000

10000

100000

13“ reel

1 / 8

S-E302

Rev.1.0,03-Mar-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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