RoHS
COMPLIANT
YJGD60G04HHQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
60A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<6.8mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
● 12V Automotive systems
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
40
±20
11
VGS
V
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Continuous Drain Current
(Note 1,2 )
Steady-State
Steady-State
8
ID
A
60
Continuous Drain Current
(Note 1,3 )
42
Pulsed Drain Current
Avalanche energy
IDM
240
81
A
TC=25℃, tp=100µs
A
EAS
mJ
VG=10V, RG=25Ω, L=0.5mH, IAS=18
2.5
TA=25℃
Steady-State
Total Power Dissipation
(Note 1,2)
1.2
TA=100℃
PD
W
62
TC=25℃
Steady-State
Total Power Dissipation
(Note 1,3 )
31
TC =100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
Typ
50
2
Max
Units
Thermal Resistance Junction-to-Ambient (Note 2)
Steady-State
Steady-State
RθJA
RθJC
60
℃/W
Thermal Resistance Junction-to-Case
2.4
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJGD60G04HHQ
F1
YJGD60G04H
5000
10000
100000
13“ reel
1 / 7
S-D367
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,4-Mar-24