Datasheet > YJGD20G10BQ

YJGD20G10BQ

更新时间： 2024-03-03 10:11:02

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	418K
描述
PDFN5060-8L

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YJGD20G10BQ 数据手册

RoHS

COMPLIANT

YJGD20G10BQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

NMOS(Die1/Die2)

● V_DS

100V

● I_D

20A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜22 mohm

＜27 mohm

General Description

● Split gate trench MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● DC-DC Converters

● Power management functions

● Industrial and Motor Drive application

● 12V, 24V and 48V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

V_DS

N-Die1/Die2

Unit

Drain-source Voltage

Gate-source Voltage

100

V_GS

±20

T_C=25℃

T_C=100℃

T_A=25℃

T_A=100℃

Drain Current

I_D

4.5

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

T_C=25℃

T_C=100℃

T_A=25℃

T_A=100℃

2.5

Total Power Dissipation^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55~+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

2.5

1 / 7

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-D283

Rev.1.0,15-Apr-23

www.21yangjie.com

12 3 4 5 6 7

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