Datasheet > YJJ05N06A

YJJ05N06A

更新时间： 2024-03-03 10:10:54

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	1145K
描述
SOT-23-6L

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数据手册

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YJJ05N06A 数据手册

RoHS

COMPLIANT

YJJ05N06A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

5.0A

● R_DS(ON)( at V_GS= 10V)

＜ 43mohm

● R_DS(ON)( at V_GS= 4.5V)

＜ 47mohm

General Description

● Trench Power LV MOSFET technology

● High density cell design for Low R_DS(ON)

Applications

● PWM application

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±20

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

5.0

4.0

I_D

Pulsed Drain Current ^A

Total Power Dissipation @ T_A=25℃

I_DM

1.25

P_D

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

100

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJJ05N06A

0605

3000

30000

120000

7“ reel

1 / 7

S-E666

Rev.1.1,25-Nov-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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