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XP1070-BD

更新时间： 2024-09-19 07:56:51
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MIMIX /
页数 文件大小 规格书
11页 1324K
描述
14.5-17.0 GHz GaAs MMIC

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XP1070-BD 数据手册

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14.5-17.0 GHz GaAs MMIC  
Power Amplifier  
January 2010 - Rev 04-Jan-10  
P1070-BD  
Features  
Chip Device Layout  
10W Power Amplifier  
XP1070-BD  
Dual Sided Bias Architecture  
17 dB Small Signal Gain  
+38.5 dBm P1dB Compression Point  
+40.0 dBm Pulsed Saturated Output Power  
+46.0 dBm Output Third Order Intercept  
100% On-Wafer DC, RF and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage 14.5-17.0 GHz GaAs  
MMIC power amplifier has a small signal gain of 17.0  
dB with +46.0 dBm output third order intercept.This  
MMIC uses Mimix Broadband’s GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and  
Absolute Maximum Ratings1  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+8.0 VDC  
600,1400,3000 mA  
+0.3 VDC  
+33.0 dBm  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy  
or eutectic solder die attach process.This device is well  
suited for Military, Space, Microwave Point-to-Point  
Radio, SATCOM and VSAT applications.  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to +85 ºC  
Channel Temperature (Tch)1 175 ºC  
(1) Channel temperature affects a device’s MTTF. It is  
recommended to keep channel temperature as low as possible  
for maximum life  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
Min  
Typ  
-
Max  
Frequency Range (f)  
14.5  
17.0  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)2  
Gain Flatness (delta S21)  
Reverse Isolation (S12)  
-
10.0  
10.0  
17.0  
+/-1.0  
60.0  
+38.5  
+46.0  
+39.0  
+7.5  
-0.8  
-
dB  
-
-
dB  
-
-
dB  
-
-
dB  
-
-
Output Power for 1dB Compression Point (P1dB)  
Output Third Order Intermods (OIP3)  
Saturated Output Power (Psat)2  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-
-
-
-
-
Drain Bias Voltage (Vd1,2,3)  
-
+7.8  
0.0  
550  
1200  
2600  
Gate Bias Voltage (Vg1,2,3)  
-1.5  
Supply Current (Id1) (Vd=7.5 V,Vg=-0.8 V Typical)  
Supply Current (Id2) (Vd=7.5 V,Vg=-0.8 V Typical)  
Supply Current (Id3) (Vd=7. 5 V, Vg=-0.8 V Typical)  
(2) Measured on wafer pulsed.  
-
-
-
500  
1000  
2200  
Page 1 of 11  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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