5秒后页面跳转
捷配首页

Datasheet > 射频和微波 > 射频/微波放大器> XP1080-QU-0N00
XP1080-QU-0N00 PDF预览

XP1080-QU-0N00

更新时间： 2024-11-10 05:53:35
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
6页 925K
描述
37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm

阅读下载

中文翻译

获取价格

XP1080-QU-0N00 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.14Is Samacsys：N
构造：COMPONENT增益：21 dB
最大输入功率 (CW)：15 dBmJESD-609代码：e4
最大工作频率：40000 MHz最小工作频率：37000 MHz
最高工作温度：85 °C最低工作温度：-40 °C
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：NICKEL/GOLD
Base Number Matches：1

XP1080-QU-0N00 数据手册

 浏览型号XP1080-QU-0N00的Datasheet PDF文件第2页浏览型号XP1080-QU-0N00的Datasheet PDF文件第3页浏览型号XP1080-QU-0N00的Datasheet PDF文件第4页浏览型号XP1080-QU-0N00的Datasheet PDF文件第5页浏览型号XP1080-QU-0N00的Datasheet PDF文件第6页 
37.0-40.0 GHz GaAs Power Amplifier  
QFN, 7x7mm  
January 2010 - Rev 22-Jan-10  
P1080-QU  
Features  
Linear Power Amplifier  
On-Chip Power Detector  
Output Power Adjust  
25.0 dB Small Signal Gain  
+27.0 dBm P1dB Compression Point  
+38.0 dBm OIP3  
Absolute Maximum Ratings1,2  
General Description  
Supply Voltage (Vd)  
+4.3V  
Mimix Broadband’s four stage 37.0-40.0 GHz  
packaged GaAs MMIC power amplifier has a small  
signal gain of 25.0 dB with a +38.0 dBm Output  
Third Order Intercept.The amplifier contains an  
integrated, temperature compensated, on-chip  
power detector.This MMIC uses Mimix  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
-1.5V < Vg < 0V  
15 dBm  
Abs. Max. Junction/Channel Temp  
See MTTF Graph 1  
Max. Operating Junction/Channel Temp 175 ºC  
Continuous Power Dissipation (Pdiss) at 85 ºC 7.0 W  
Thermal Resistance (Tchannel=150 ºC)  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Mounting Temperature  
ESD Min. - Machine Model (MM)  
ESD Min. - Human Body Model (HBM)  
MSL Level  
12 ºC/W  
-40 to +85 ºC  
-65 to +150 ºC  
See solder reflow profile  
Class A  
Class 1A  
MSL3  
Broadband’s GaAs pHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The device comes in a RoHS compliant  
7x7mm QFN Surface Mount Package offering  
excellent RF and thermal properties.This device is  
well suited for Millimeter-wave Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
(1) Channel temperature directly affects a device's MTTF. Channel temperature should  
be kept as low as possible to maximize lifetime.  
(2) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <9V  
Electrical Characteristics for 37 - 40 GHz  
(AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Units  
GHz  
dB  
dB  
dB  
Min.  
37.0  
10.0  
4.0  
21.0  
-
Typ.  
-
14.0  
8.0  
25.0  
+/-1.0  
50  
Max.  
40.0  
-
-
30.0  
-
-
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
dB  
-
Output Power for 1dB Compression (P1dB)  
Output IMD3 with Pout (scl) = 14 dBm  
Output IP3  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
dBm  
dBc  
dBm  
VDC  
VDC  
mA  
-
27.0  
48.0  
+38.0  
4.0  
-0.3  
1000  
-
-
-
43.0  
35.5  
-
-1.0  
-
4.0  
-0.1  
1200  
Supply Current (Id1) (Vd=4.0V,Vg=-0.3V)  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

中文翻译

下载PDF

与XP1080-QU-0N00相关器件

型号 品牌 获取价格 描述 数据表
XP1080-QU-0N0T MIMIX

获取价格

 		37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm
XP1080-QU-EV1 MIMIX

获取价格

 		37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm
XP10-M HONEYWELL

获取价格

 		Ten-Input Monitor Module
XP1101 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
XP1101TX PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
XP1110 PANASONIC

获取价格

 		Silicon PNP epitaxial planer transistor
XP1110TX PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
XP1111 PANASONIC

获取价格

 		Silicon PNP epitaxial planer transistor
XP1111TX PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
XP1112 PANASONIC

获取价格

 		Silicon PNP epitaxial planer transistor

与XP1080-QU-0N00相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证