Datasheet > XP1080-QU_11

XP1080-QU_11

更新时间： 2024-09-19 07:56:51

品牌	Logo	应用领域
MIMIX		放大器功率放大器
页数	文件大小	规格书
6页	935K
描述
37.0-40.0 GHz GaAs Power Amplifier

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XP1080-QU_11 数据手册

37.0-40.0 GHz GaAs Power Amplifier

QFN, 7x7mm

January 2011 - Rev 10-Jan-11

P1080-QU

Features

Linear Power Amplifier

On-Chip Power Detector

Output Power Adjust

25.0 dB Small Signal Gain

+27.0 dBm P1dB Compression Point

+38.0 dBm OIP3

Absolute Maximum Ratings^1,2

General Description

Supply Voltage (Vd)

+4.3V

Mimix Broadband’s four stage 37.0-40.0 GHz

packaged GaAs MMIC power amplifier has a small

signal gain of 25.0 dB with a +38.0 dBm Output

Third Order Intercept.The amplifier contains an

integrated, temperature compensated, on-chip

power detector.This MMIC uses Mimix

Gate Bias Voltage (Vg)

Input Power (Pin)

-1.5V < Vg < 0V

15 dBm

Abs. Max. Junction/Channel Temp

See MTTF Graph 1

Max. Operating Junction/Channel Temp 175 ºC

Continuous Power Dissipation (Pdiss) at 85 ºC 7.0 W

Thermal Resistance (Tchannel=150 ºC)

Operating Temperature (Ta)

Storage Temperature (Tstg)

Mounting Temperature

ESD Min. - Machine Model (MM)

ESD Min. - Human Body Model (HBM)

MSL Level

12 ºC/W

-40 to +85 ºC

-65 to +150 ºC

See solder reflow profile

Class A

Class 1A

MSL3

Broadband’s GaAs pHEMT device model

technology, and is based upon electron beam

lithography to ensure high repeatability and

uniformity.The device comes in a RoHS compliant

7x7mm QFN Surface Mount Package offering

excellent RF and thermal properties.This device

has been designed for use in 38 GHz

(1) Channel temperature directly affects a device's MTTF. Channel temperature should

be kept as low as possible to maximize lifetime.

(2) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <9V

Point-to-Point Microwave Radio applications.

Electrical Characteristics for 37 - 40 GHz

(AmbientTemperatureT = 25 ^oC)

Parameter

Frequency Range (f)

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Units

GHz

Min.

37.0

10.0

4.0

21.0

Typ.

14.0

8.0

25.0

+/-1.0

Max.

40.0

30.0

Gain Flatness ( S21)

Reverse Isolation (S12)

Output Power for 1dB Compression (P1dB)

Output IMD3 with Pout (scl) = 14 dBm

Output IP3

Drain Bias Voltage (Vd)

Gate Bias Voltage (Vg)

dBm

dBc

dBm

VDC

27.0

48.0

+38.0

4.0

-0.3

1000

43.0

35.5

-1.0

4.0

-0.1

1200

Supply Current (Id1) (Vd=4.0V,Vg=-0.3V)

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5 6

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与XP1080-QU_11相关器件

型号	品牌	获取价格	描述	数据表
XP1080-QU-0N00	MIMIX	获取价格	37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm
XP1080-QU-0N0T	MIMIX	获取价格	37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm
XP1080-QU-EV1	MIMIX	获取价格	37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm
XP10-M	HONEYWELL	获取价格	Ten-Input Monitor Module
XP1101	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
XP1101TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
XP1110	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor
XP1110TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
XP1111	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor
XP1111TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

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