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XP1080-QU-0N0T

更新时间： 2024-11-10 06:01:47
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
6页 925K
描述
37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm

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XP1080-QU-0N0T 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.14构造：COMPONENT
增益：21 dB最大输入功率 (CW)：15 dBm
JESD-609代码：e4最大工作频率：40000 MHz
最小工作频率：37000 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND MEDIUM POWER
端子面层：NICKEL/GOLDBase Number Matches：1

XP1080-QU-0N0T 数据手册

 浏览型号XP1080-QU-0N0T的Datasheet PDF文件第2页浏览型号XP1080-QU-0N0T的Datasheet PDF文件第3页浏览型号XP1080-QU-0N0T的Datasheet PDF文件第4页浏览型号XP1080-QU-0N0T的Datasheet PDF文件第5页浏览型号XP1080-QU-0N0T的Datasheet PDF文件第6页 
37.0-40.0 GHz GaAs Power Amplifier  
QFN, 7x7mm  
January 2010 - Rev 22-Jan-10  
P1080-QU  
Features  
Linear Power Amplifier  
On-Chip Power Detector  
Output Power Adjust  
25.0 dB Small Signal Gain  
+27.0 dBm P1dB Compression Point  
+38.0 dBm OIP3  
Absolute Maximum Ratings1,2  
General Description  
Supply Voltage (Vd)  
+4.3V  
Mimix Broadband’s four stage 37.0-40.0 GHz  
packaged GaAs MMIC power amplifier has a small  
signal gain of 25.0 dB with a +38.0 dBm Output  
Third Order Intercept.The amplifier contains an  
integrated, temperature compensated, on-chip  
power detector.This MMIC uses Mimix  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
-1.5V < Vg < 0V  
15 dBm  
Abs. Max. Junction/Channel Temp  
See MTTF Graph 1  
Max. Operating Junction/Channel Temp 175 ºC  
Continuous Power Dissipation (Pdiss) at 85 ºC 7.0 W  
Thermal Resistance (Tchannel=150 ºC)  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Mounting Temperature  
ESD Min. - Machine Model (MM)  
ESD Min. - Human Body Model (HBM)  
MSL Level  
12 ºC/W  
-40 to +85 ºC  
-65 to +150 ºC  
See solder reflow profile  
Class A  
Class 1A  
MSL3  
Broadband’s GaAs pHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The device comes in a RoHS compliant  
7x7mm QFN Surface Mount Package offering  
excellent RF and thermal properties.This device is  
well suited for Millimeter-wave Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
(1) Channel temperature directly affects a device's MTTF. Channel temperature should  
be kept as low as possible to maximize lifetime.  
(2) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <9V  
Electrical Characteristics for 37 - 40 GHz  
(AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Units  
GHz  
dB  
dB  
dB  
Min.  
37.0  
10.0  
4.0  
21.0  
-
Typ.  
-
14.0  
8.0  
25.0  
+/-1.0  
50  
Max.  
40.0  
-
-
30.0  
-
-
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
dB  
-
Output Power for 1dB Compression (P1dB)  
Output IMD3 with Pout (scl) = 14 dBm  
Output IP3  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
dBm  
dBc  
dBm  
VDC  
VDC  
mA  
-
27.0  
48.0  
+38.0  
4.0  
-0.3  
1000  
-
-
-
43.0  
35.5  
-
-1.0  
-
4.0  
-0.1  
1200  
Supply Current (Id1) (Vd=4.0V,Vg=-0.3V)  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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