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XP1076-SD-0G0T PDF预览

XP1076-SD-0G0T

更新时间: 2024-09-20 04:52:11
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
14页 1499K
描述
Amplifier,

XP1076-SD-0G0T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84特性阻抗:50 Ω
构造:COMPONENT增益:13 dB
最大输入功率 (CW):23 dBmJESD-609代码:e3
最大工作频率:2300 MHz最小工作频率:700 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND MEDIUM POWER端子面层:Matte Tin (Sn)
Base Number Matches:1

XP1076-SD-0G0T 数据手册

 浏览型号XP1076-SD-0G0T的Datasheet PDF文件第2页浏览型号XP1076-SD-0G0T的Datasheet PDF文件第3页浏览型号XP1076-SD-0G0T的Datasheet PDF文件第4页浏览型号XP1076-SD-0G0T的Datasheet PDF文件第5页浏览型号XP1076-SD-0G0T的Datasheet PDF文件第6页浏览型号XP1076-SD-0G0T的Datasheet PDF文件第7页 
700-2300 MHz  
31.5 dBm InGaP HBT Power Amplifier  
January 2010 - Rev 13-Jan-10  
XP1076-SD  
Features  
31.5 dBm P1dB  
46.5 dBm OIP3  
Active Bias Circuit  
14.5 dB Gain @ 2GHz  
5V Single Positive Voltage Supply  
RoHS Compliant SOIC-8  
General Description  
The XP1076-SD is a high linearity power amplifier capable of 31.5 dBm  
of 1-dB compressed power and 46.5 dBm of OIP3.This device has an  
integrated active bias circuit and can be externally optimized to  
achieve 14.5 dB of gain at 2 GHz.The XP1076-SD is housed in an RoHS  
compliant SOIC-8 power package and has a low thermal resistance of  
13.5 ºC/W. All devices are 100% RF and DC tested.The XP1076-SD is  
specifically designed to be used as a linear driver amplifier or as an  
output stage amplifier for wireless infrastructure equipment.  
Typical Performance  
Parameter  
Absolute Maximum Ratings  
TYP  
TYP  
TYP  
Units  
Supply Voltage  
+5.5 V  
RF Input Power  
+23 dBm  
-55 ºC to +150 ºC  
175 ºC  
Frequency (F)  
877  
17.5  
45.5  
31.0  
485  
1960  
14.5  
46.5  
31.5  
485  
2140  
13.0  
46.5  
31.5  
470  
MHz  
dB  
Storage Temperature (Tstg)  
Junction Temperature  
Operating Temperature  
Power Dissipation (PDC)  
Current (Icc)  
Gain (S21)  
Output IP3* (OIP3)  
Output P1dB  
dBm  
dBm  
mA  
dBm  
dB  
-40 ºC to +85 ºC  
5.0W  
Quiescent Current (Icq)  
Output Power @ ACPR = -45dBc * *  
Input Return Loss (S11)  
Output Return Loss (S22)  
Noise Figure (NF)  
0.9A  
25.5  
-10.0  
-12.5  
8.5  
26.0  
-19.0  
-19.0  
5.0  
23.0  
-13.5  
-11.0  
6.0  
ESD (HBM)  
TBD  
Moisture Sensitivity Level (MSL)  
Thermal Resistance  
TBD  
dB  
13.5 ºC/W  
dB  
Operation of this device above any of these parameters may cause damage.  
Data measured in Mimix evaluation board with the proper matching elements  
*OIP3 is measured with Pout = 12 dBm/tone, 1 MHz spacing  
**@ 2140 MHz,WCDMA,TM-1, 64 DPCH  
@ 877 & 1960, IS-95, 9 forward channels  
Electrical Characteristics (T = 25ºC,Vcc = 5V)  
Unless otherwise specified, the following specifications are guaranteed at room temerpature in a Mimix fixture.  
Parameter  
Frequency Range (f)  
Test Frequency  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Output Intercept Point (OIP3)  
Output P1dB  
Condition  
Units  
MHz  
MHz  
dB  
dB  
dB  
dBm  
dBm  
mA  
V
Min.  
700  
Typ.  
2140  
2140  
13.0  
-13.5  
-11.0  
+46.5  
+31.5  
470  
Max.  
2300  
Externally Matched  
Externally Matched  
Externally Matched  
29.0  
Quiescent Current (Icq)  
Supply Voltage  
540  
5.0  
OIP3 is measured with Pout = 12 dBm/tone, 1 MHz spacing  
Page 1 of 14  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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