Datasheet > WCMA2016U4B

WCMA2016U4B

更新时间： 2022-09-11 11:37:55

品牌	Logo	应用领域
韦达 - WEIDA		/
页数	文件大小	规格书
12页	239K
描述
128K x 16 Static RAM

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WCMA2016U4B 数据手册

WCMA2016U4B

AC Test Loads and Waveforms

ALL INPUT PULSES

90%

Typ

OUTPUT

90%

10%

GND

Rise TIme: 1 V/ns

30 pF

Fall Time: 1 V/ns

INCLUDING

JIG AND

SCOPE

Equivalent to:

THÉVENIN EQUIVALENT

OUTPUT

Parameters

3.0V

1.105

1.550

0.645

1.75

Unit

KOhms

Volts

R_TH

V_TH

Data Retention Characteristics (Over the Operating Range)

Parameter

V_DR

Description

Conditions

Min.

Typ.^[4]

Max.

Unit

V_CCfor Data Retention

1.5

V_ccmax

V_CC= 1.5V

CE >V_CC– 0.2V,

_IN>V_CC– 0.2V or V_IN<0.2V

I_CCDR

Data Retention Current

0.5

7.5

[5]

t_CDR

Chip Deselect to Data

Retention Time

[6]

t_R

Operation Recovery Time

Data Retention Waveform^[7]

DATA RETENTION MODE

> 1.5 V

V_CC(min)

CDR

CE or

BHE.BLE

Note:

6. Full Device AC operation requires linear V_CCramp from V_DRto V_CC(min.)> 100 ms or stable at V_CC(min.)> 100 ms.

7. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

1 2 345 6 7...12

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