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WCMA4016U4X-FF70 PDF预览

WCMA4016U4X-FF70

更新时间: 2024-02-12 09:57:12
品牌 Logo 应用领域
韦达 - WEIDA /
页数 文件大小 规格书
12页 220K
描述
256K x 16 Static RAM

WCMA4016U4X-FF70 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84

WCMA4016U4X-FF70 数据手册

 浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第2页浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第3页浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第4页浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第5页浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第6页浏览型号WCMA4016U4X-FF70的Datasheet PDF文件第7页 
A4016U4X  
WCMA4016U4X  
256K x 16 Static RAM  
more than 99% when deselected (CE HIGH or both BLE and  
BHE are HIGH). The input/output pins (I/O0 through I/O15) are  
placed in a high-impedance state when: deselected (CE  
HIGH), outputs are disabled (OE HIGH), both Byte High En-  
able and Byte Low Enable are disabled (BHE, BLE HIGH), or  
during a write operation (CE LOW and WE LOW).  
Features  
• Low Voltage range:  
— 2.7V-3.3V  
• Ultra-low active power  
— Typical active current: 1.5 mA @ f = 1MHz  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A17). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A17).  
— Typical active current: 7 mA @ f = fmax  
• Low standby power  
• Easy memory expansion with CE and OE features  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
Functional Description  
The WCMA4016U4X is a high-performance CMOS static  
RAMs organized as 256K words by 16 bits. These devices  
feature advanced circuit design to provide ultra-low active cur-  
rent. This device is ideal for portable applications such as cel-  
lular telephones. The devices also have an automatic pow-  
er-down feature that significantly reduces power consumption  
by 80% when addresses are not toggling. The device can also  
be put into standby mode reducing power consumption by  
The WCMA4016U4X is available in a 48-ball FBGA package.  
Logic Block Diagram  
DATA IN DRIVERS  
A
10  
9
A
A
8
7
6
A
A
A
A
A
256K x 16  
5
4
RAM Array  
I/O – I/O  
0
7
2048 x 2048  
3
2
I/O – I/O  
A
A
A
8
15  
1
0
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
CE  
Power -Down  
Circuit  
BHE  
BLE  

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