Datasheet > WCMA2016U4B-FF70

WCMA2016U4B-FF70

更新时间： 2024-01-09 23:56:53

品牌	Logo	应用领域
韦达 - WEIDA		/
页数	文件大小	规格书
12页	239K
描述
128K x 16 Static RAM

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技术参数
数据手册

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WCMA2016U4B-FF70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

WCMA2016U4B-FF70 数据手册

U 4 B

WCMA2016U4B

128K x 16 Static RAM

be put into standby mode reducing power consumption by

more than 99% when deselected (CE HIGH or both BLE and

BHE are HIGH). The input/output pins (I/O₀through I/O₁₅) are

placed in a high-impedance state when: deselected (CE

HIGH), outputs are disabled (OE HIGH), both Byte High En-

able and Byte Low Enable are disabled (BHE, BLE HIGH), or

during a write operation (CE LOW, and WE LOW).

Features

• High Speed

—55ns and 70ns speed availability

• Low Voltage range:

— 2.7V-3.3V

• Ultra-low active power

—Typical active current: 1.5 mA @ f = 1MHz

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O through I/O₇), is

—Typical active current: 7 mA @ f = f_max

• Low standby power

written into the location specified on the address pins (A₀

through A ). If Byte High Enable (BHE) is LOW, then data

• Easy memory expansion with CE and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

from I/O pins (I/O₈through I/O₁₅) is written into the location

specified on the address pins (A₀through A₁₆).

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins will appear on I/O₀to I/O₇. If Byte High Enable (BHE) is

LOW, then data from memory will appear on I/O₈to I/O₁₅. See

the truth table at the back of this data sheet for a complete

description of read and write modes.

Functional Description

The WCMA2016U4B is a high-performance CMOS static

RAMs organized as 128K words by 16 bits. These devices

feature advanced circuit design to provide ultra-low active cur-

rent. This device is ideal for portable applications such as cel-

lular telephones. The devices also have an automatic pow-

er-down feature that significantly reduces power consumption

by 80% when addresses are not toggling. The device can also

The WCMA2016U4B is available in a 48-ball FBGA package.

Logic Block Diagram

DATA IN DRIVERS

128K x 16

RAM Array

I/O – I/O

2048 x 1024

I/O – I/O

COLUMN DECODER

BHE

BLE

Power-Down

Circuit

BHE

BLE

12 3 4 5 6 7...12

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