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WCMB4016R4X PDF预览

WCMB4016R4X

更新时间: 2022-09-11 11:37:41
品牌 Logo 应用领域
韦达 - WEIDA /
页数 文件大小 规格书
12页 218K
描述
256K x 16 Static RAM

WCMB4016R4X 数据手册

 浏览型号WCMB4016R4X的Datasheet PDF文件第2页浏览型号WCMB4016R4X的Datasheet PDF文件第3页浏览型号WCMB4016R4X的Datasheet PDF文件第4页浏览型号WCMB4016R4X的Datasheet PDF文件第5页浏览型号WCMB4016R4X的Datasheet PDF文件第6页浏览型号WCMB4016R4X的Datasheet PDF文件第7页 
WCMB4016R4X  
256K x 16 Static RAM  
and BHE are HIGH). The input/output pins (I/O0 through I/O15  
)
Features  
are placed in a high-impedance state when: deselected (CE  
HIGH), outputs are disabled (OE HIGH), both Byte High En-  
able and Byte Low Enable are disabled (BHE, BLE HIGH), or  
during a write operation (CE LOW and WE LOW).  
• Low voltage range:  
1.65V1.95V  
• Ultra-low active power  
— Typical Active Current: 0.5 mA @ f = 1 MHz  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A17). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A17).  
— Typical Active Current: 2 mA @ f = fmax (70 ns speed)  
• Low standby power  
• Easy memory expansion with CE and OE features  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
Reading from the device is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then  
data from the memory location specified by the address pins  
will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,  
then data from memory will appear on I/O8 to I/O15. See the  
Truth Table at the back of this data sheet for a complete de-  
scription of read and write modes.  
Functional Description  
The WCMB4016R4X is a high-performance CMOS static  
RAM organized as 256K words by 16 bits. This device features  
advanced circuit design to provide ultra-low active current.  
This device is ideal for portable applications such as cellular  
telephones. The device also has an automatic power-down  
feature that significantly reduces power consumption by 99%  
when addresses are not toggling. The device can also be put  
into standby mode when deselected (CE HIGH or both BLE  
The WCMB4016R4X is available in a 48-ball FBGA package.  
Logic Block Diagram  
DATA IN DRIVERS  
A
10  
9
A
A
8
A
7
A
A
256K x 16  
6
RAM Array  
I/O –I/O  
5
0
7
A
2048 X 2048  
4
I/O –I/O  
A
8
15  
3
A
A
2
1
A
0
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
CE  
Power -Down  
Circuit  
BHE  
BLE  
Created January 17, 2002  

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