Datasheet > WCMA1016U4X-FF55

WCMA1016U4X-FF55

更新时间： 2024-01-23 10:34:50

品牌	Logo	应用领域
韦达 - WEIDA		/
页数	文件大小	规格书
11页	309K
描述
64K x 16 Static RAM

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技术参数
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WCMA1016U4X-FF55 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

WCMA1016U4X-FF55 数据手册

WCMA1016U4X

AC Test Loads and Waveforms

ALL INPUT PULSES

90%

V_CC

OUTPUT

V_CCTyp

GND

90%

10%

30 pF

Fall Time:

1 V/ns

Rise Time:

1 V/ns

INCLUDING

JIG AND

SCOPE

Equivalent to:

THÉVENIN EQUIVALENT

RTH

OUTPUT

Parameters

3.3V

1213

1378

645

UNIT

R_TH

V_TH

Ohms

Volts

1.75

Data Retention Characteristics (Over the Operating Range)

Parameter

V_DR

Description

V_CCfor Data Retention

Conditions

Min.

2.0

Typ.^[3]

Max.

Unit

3.6

V_CC= 2.0V

CE > V_CC− 0.3V,

V_IN> V_CC− 0.3V or V_IN< 0.3V

I_CCDR

Data Retention Current

0.5

µA

[4]

t_CDR

Chip Deselect to Data

Retention Time

Operation Recovery Time

[5]

t_R

t_RC

Data Retention Waveform^[6]

DATA RETENTION MODE

> 2.0 V

V_CC(min.)

CDR

CE or

BHE.BLE

Notes:

5. Full device operation requires linear V ramp from V to V_CC(min)>100 µs or stable at V_CC(min)>100 µs.

6. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

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