Datasheet > W29C011A

W29C011A

更新时间： 2024-11-21 22:14:51

品牌	Logo	应用领域
华邦 - WINBOND		/
页数	文件大小	规格书
19页	153K
描述
128K X 8 CMOS FLASH MEMORY

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数据手册

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W29C011A 数据手册

Preliminary W29C011A

128K ´ 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29C011A is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The

device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W29C011A results in fast program/erase operations

with extremely low current consumption (compared to other comparable 5-volt flash memory

products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 5-volt program and erase operations

· Fast page-write operations

· Low power consumption

- Active current: 25 mA (typ.)

- Standby current: 20 mA (typ.)

- 128 bytes per page

- Page program cycle: 10 mS (max.)

- Effective byte-program cycle time: 39 mS

- Software-protected data write

· Fast chip-erase operation: 50 mS

· Read access time: 150 nS

· Automatic program timing with internal VPP

generation

· End of program detection

- Toggle bit

- Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard byte-wide pinouts

· Page program/erase cycles: 1,000

· Ten-year data retention

· Software and hardware data protection

· Available packages: 32-pin 600 mil DIP, 450

mil SOP and PLCC

Publication Release Date: December 1997

- 1 -

Revision A1

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