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W29C020C-90 PDF预览

W29C020C-90

更新时间: 2024-11-19 22:14:51
品牌 Logo 应用领域
华邦 - WINBOND /
页数 文件大小 规格书
21页 194K
描述
256K X 8 CMOS FLASH MEMORY

W29C020C-90 数据手册

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W29C020C  
256K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
´
The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K 8 bits. The  
device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt  
PP  
V
is not required. The unique cell architecture of the W29C020C results in fast write  
(erase/program) operations with extremely low current consumption compared to other comparable 5-  
volt flash memory products. The device can also be written (erased and programmed) by using  
standard EPROM programmers.  
FEATURES  
·
·
· Single 5-volt write (erase and program)  
operations  
Software and hardware data protection  
Low power consumption  
· Fast page-write operations  
- Active current: 25 mA (typ.)  
-
-
128 bytes per page  
-
m
Standby current: 20 A (typ.)  
Page write (erase/program) cycle: 10 mS  
(max.)  
· Automatic write (erase/program) timing with  
internal V generation  
PP  
-
Effective byte-write (erase/program) cycle  
· End of write (erase/program) detection  
m
time: 39 S  
-
-
Toggle bit  
-
Optional software-protected data write  
Data polling  
· Fast chip-erase operation: 50 mS  
· Two 8 KB boot blocks with lockout  
· Whole chip cycling: 10K (typ.)  
· Read access time: 70/90/120 nS  
· Twenty-year data retention  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Available packages: 32-pin 600 mil DIP, 32-pin  
TSOP, and 32-pin PLCC  
Publication Release Date: April 2000  
- 1 -  
Revision A2  

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