Datasheet > W29C020C12BN

W29C020C12BN

更新时间： 2024-11-19 23:41:31

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	305K
描述
EEPROM\|FLASH\|256KX8\|CMOS\|DIP\|32PIN\|PLASTIC

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W29C020C12BN 数据手册

W29C020C

´ 8 CMOS FLASH MEMORY

256K

GENERAL DESCRIPTION

The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The

device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt

VPP is not required. The unique cell architecture of the W29C020C results in fast write (erase/program)

operations with extremely low current consumption compared to other comparable 5-volt flash memory

products. The device can also be written (erased and programmed) by using standard EPROM

programmers.

FEATURES

· Single 5-volt write (erase and program)

operations

· Software and hardware data protection

· Low power consumption

· Fast page-write operations

- 128 bytes per page

- Active current: 25 mA (typ.)

- Standby current: 20 mA (typ.)

- Page write (erase/program) cycle: 10 mS

(max.)

· Automatic write (erase/program) timing with

internal VPP generation

- Effective byte-write (erase/program) cycle

time: 39 mS

· End of write (erase/program) detection

- Toggle bit

- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Two 8 KB boot blocks with lockout

· Whole chip cycling: 10K (typ.)

· Read access time: 70/90/120 nS

· Twenty-year data retention

- Data polling

· Latched address and data

· All inputs and outputs directly TTL compatible

· JEDEC standard byte-wide pinouts

· Available packages: 32-pin 600 mil DIP, 32-pin

TSOP, and 32-pin PLCC

Publication Release Date: February 18, 2002

- 1 -

Revision A4

12 3 4 5 6 7...22

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与W29C020C12BN相关器件

型号	品牌	获取价格	描述	数据表
W29C020C-70	WINBOND	获取价格	256K X 8 CMOS FLASH MEMORY
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