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VT6T11

更新时间： 2022-09-11 23:25:35

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	188K
描述
Power management (dual transistors)

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VT6T11 数据手册

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Power management (dual transistors)

VT6T11

zStructure

zDimensions (Unit : mm)

PNP silicon epitaxial planar transistor

VMT6

0.5

± 0.1

1.2

(6)

±

0.1

(5)

(4)

zFeatures

0 ~ 0.05

1) Very small package with two transistors.

2) Suitable for current mirror circuits.

(1)

(2)

(3)

0.16

±

0.05

0.13

± 0.05

0.4

0.8

0.4

±

0.1

zApplications

Current mirror circuits

Abbreviated symbol : T11

Each lead has same dimensions.

UNIT : mm

zPackaging specifications

zInternal circuit

Package

Code

Taping

T2R

(6)

(5)

(4)

(1) Base

(Tr1)

(2) Emitter

(3) Emitter

(Tr1)

(Tr2)

Basic ordering

unit (pieces)

8000

Type

Tr2

(4) Collector (Tr2)

(5) Collector (Tr1)

VT6T11

Tr1

(5) Base

(Tr2)

(6) Collector (Tr1)

zAbsolute maximum ratings (Ta=25°C)

(6) Base

(Tr2)

(1)

(2)

(3)

Limits

Symbol

V^CBO

VCEO

VEBO

I^C

Unit

V

Parameter

−

−

20

20

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V

−

5

V

−

−

200

400

mA

mA

mW

mW

°C

Collector current

∗1

ICP

Total

150

120

∗2

P^D

Power dissipation

Element

T^j

150

Junction temperature

−55 to +150

°C

T^stg

Storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

zElectrical characteristics (Ta=25°C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

V

Conditions

−20

−20

−5

−

−

−

120

−

−

−

−

−

−

−

−

I

I

I

C

= −1mA

C= −50µA

V

V

E

= −50µA

CB= −20V

EB= −5V

I

CBO

EBO

CE(sat)

FE

FE (Tr1) /

−0.1

−0.1

−0.30

560

µA

µA

V

V

V

Emitter cut-off current

I

Collector-emitter saturation voltage

DC current gain

V

I

C

= −100mA, I = −10mA

B

−0.12

−

h

−

V

V

V

V

CE= −2V, I

C= −1mA

DC current gain ratio

Transition frequency

Output capacitance

h

hFE (Tr2) 0.9

−

350

3

1.1

−

−

−

MHz

pF

CE= −2V, I

C= −1mA

f

T

−

−

CE= −10V, I

CB= −10V, I

E

E

=10mA, f=100MHz

=0A, f=1MHz

Cob

www.rohm.com

2009.06 - Rev.A

1/2

c

○ 2009 ROHM Co., Ltd. All rights reserved.

12 3

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