Datasheet > VT6X11

VT6X11

更新时间： 2024-11-13 06:01:59

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	184K
描述
Power management (dual transistors)

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中文翻译

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VT6X11 数据手册

Power management (dual transistors)

VT6X11

zStructure

zDimensions (Unit : mm)

NPN silicon epitaxial planar transistor

VMT6

0.5

± 0.1

1.2

(6)

0.1

(5)

(4)

zFeatures

0 ~ 0.05

1) Very small package with two transistors.

2) Suitable for current mirror circuits.

(1)

(2)

(3)

0.16

0.05

0.13

± 0.05

0.4

0.8

0.4

0.1

zApplications

Current mirror circuits

Abbreviated symbol : X11

Each lead has same dimensions.

UNIT : mm

zPackaging specifications

zInner circuit

Package

Code

Taping

T2R

(6)

(5)

(4)

(1) Base

(Tr1)

(2) Emitter

(3) Emitter

(Tr1)

(Tr2)

Basic ordering

unit (pieces)

8000

Type

Tr2

(4) Collector (Tr2)

(5) Collector (Tr1)

VT6X11

Tr1

(5) Base

(Tr2)

(6) Collector (Tr1)

z Absolute maximum ratings (Ta=25°C)

(6) Base

(Tr2)

(1)

(2)

(3)

Limits

Symbol

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

200

400

150

120

°C

Collector current

∗1

∗2

Total

Power dissipation

Element

150

Junction temperature

−55 to +150

°C

stg

Range of storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

zElectrical characteristics (Ta=25°C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

Conditions

−

0.1

0.30

560

=1mA

C=50µA

=50µA

CB=20V

EB=5V

CBO

EBO

CE(sat)

FE (Tr1) /

−

120

µA

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

=100mA, I =10mA

0.12

−

CE=2V, I

C=1mA

DC current gain ratio

Transition frequency

Output capacitance

hFE (Tr2) 0.9

−

400

1.1

−

MHz

CE=2V, I

C=1mA

−

CE=10V, I

CB=10V, I

=−10mA, f=100MHz

=0A, f=1MHz

Cob

www.rohm.com

2009.06 - Rev.A

1/2

12 3

中文翻译

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与VT6X11相关器件

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VT6X11T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, VMT6, 6
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VT6X12T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, VMT6, 6
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