Datasheet > VT6X2

VT6X2

更新时间： 2024-11-13 06:01:59

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	200K
描述
Power management (dual transistors)

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中文翻译

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VT6X2 数据手册

Power management (dual transistors)

VT6X2

zStructure

zDimensions (Unit : mm)

NPN silicon epitaxial planar transistor

VMT6

0.5

± 0.1

1.2

(6)

0.1

(5)

(4)

zFeatures

0 ~ 0.05

1) Very small package with two transistors.

(1)

(2)

(3)

0.16

0.05

0.13

± 0.05

0.4

0.8

0.4

0.1

zApplications

Switch, LED driver

Abbreviated symbol : X2

Each lead has same dimensions.

UNIT : mm

zPackaging specifications

zInner circuit

Package

Code

Taping

T2R

(6) (5) (4)

(1) Emitter (Tr1)

(2) Base (Tr1)

Tr2

Basic ordering

unit (pieces)

8000

Tr1

Type

(3) Collector (Tr2)

(4) Emitter (Tr2)

VT6X2

(5) Base

(6) Collector (Tr1)

(Tr2)

(1) (2) (3)

z Absolute maximum ratings (Ta=25°C)

Limits

Symbol

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

100

200

150

120

°C

Collector current

∗1

∗2

Total

Element

Power dissipation

150

Junction temperature

−55 to +150

°C

stg

Range of storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

zElectrical characteristics (Ta=25°C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

Conditions

−

=1mA

=50µA

−

=50µA

CB=50V

EB=5V

CBO

EBO

CE(sat)

−

120

−

0.1

0.30

560

−

µA

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

=50mA, I

=5mA

0.10

−

350

1.6

−

MHz

CE=6V, I =1mA

Transition frequency

CE=10V, I

CB=10V, I

=−10mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2009.10 - Rev.A

1/2

12 3

中文翻译

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