Datasheet > VT6Z1

VT6Z1

更新时间： 2024-11-13 05:53:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	218K
描述
Power management (dual transistors)

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中文翻译

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数据手册

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VT6Z1 数据手册

Power management (dual transistors)

VT6Z1

zStructure

zDimensions (Unit : mm)

Silicon epitaxial planar transistor

VMT6

0.5

± 0.1

1.2

(6)

0.1

(5)

(4)

zFeatures

0 ~ 0.05

Very small package with two transistors.

(1)

(2)

(3)

0.16

0.05

0.13

± 0.05

0.4

0.8

0.4

0.1

zApplications

Switch, LED driver

Abbreviated symbol : Z1

Each lead has same dimensions.

UNIT : mm

zPackaging specifications

zInner circuit

Package

Code

Taping

T2R

(6) (5) (4)

(1) Emitter (Tr1)

(2) Base (Tr1)

Tr2

Basic ordering

unit (pieces)

8000

Tr1

Type

(3) Collector (Tr2)

(4) Emitter (Tr2)

VT6Z1

(5) Base

(6) Collector (Tr1)

(Tr2)

(1) (2) (3)

z Absolute maximum ratings (Ta=25°C)

<Tr1> (PNP)

Limits

Symbol

Unit

Parameter

VCBO

VCEO

VEBO

−20

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−5

−200

−400

Collector current

∗1

∗1 Pw=1mS Single pulse

<Tr2> (NPN)

Limits

Symbol

Unit

Parameter

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

200

400

Collector current

∗1

∗1 Pw=1mS Single pulse

Limits

150

Symbol

Unit

Parameter

Total

∗2

Power dissipation

Element

120

°C

150

Junction temperature

Storage temperature

−55 to +150

stg

∗2 Each terminal mounted on a recommended land

www.rohm.com

2009.06 - Rev.A

1/4

12 3 4 5

中文翻译

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