Datasheet > VT6T2

VT6T2

更新时间： 2024-11-13 06:01:59

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	186K
描述
Power management (dual transistors)

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中文翻译

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VT6T2 数据手册

Power management (dual transistors)

VT6T2

zStructure

zDimensions (Unit : mm)

PNP silicon epitaxial planar transistor

VMT6

0.5

± 0.1

1.2

(6)

0.1

(5)

(4)

0 ~ 0.05

zFeatures

Very small package with two transistors.

(1)

(2)

(3)

0.16

0.05

0.13

± 0.05

0.4

0.8

0.4

0.1

zApplications

Switch, LED driver

Abbreviated symbol : T2

UNIT : mm

Each lead has same dimensions.

zinner circuit

(6) (5) (4)

zPackaging specifications

Package

Code

Taping

T2R

(1) Emitter (Tr1)

(2) Base (Tr1)

Tr2

Basic ordering

unit (pieces)

8000

Tr1

Type

(3) Collector (Tr2)

(4) Emitter (Tr2)

VT6T2

(5) Base

(6) Collector (Tr1)

(Tr2)

(1) (2) (3)

z Absolute maximum ratings (Ta=25°C)

Limits

Symbol

V^CBO

V^CEO

VEBO

I^C

Unit

Parameter

−50

−5

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−100

−200

150

120

°C

Collector current

∗1

ICP

Total

∗2

P^D

Power dissipation

Element

T^j

150

Junction temperature

−55 to +150

°C

T^stg

Storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

zElectrical characteristics (Ta=25°C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

Conditions

−

1mA

50µA

−

50µA

50V

50mA, I

CBO

EBO

CE(sat)

−

120

−

0.1

µA

−

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

−

560

−

0.40

−5mA

−

0.15

−

MHz

−

6V, I

−1mA

Transition frequency

300

10V, I

=10mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2009.10 - Rev.A

1/2

12 3

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