Power management (dual transistors)
VT6T12
zStructure
zDimensions (Unit : mm)
PNP silicon epitaxial planar transistor
VMT6
0.5
± 0.1
1.2
(6)
±
0.1
(5)
(4)
zFeatures
0 ~ 0.05
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
(1)
(2)
(3)
0.16
±
0.05
0.13
± 0.05
0.4
0.8
0.4
±
0.1
zApplications
Current mirror circuits
Abbreviated symbol : T12
Each lead has same dimensions.
UNIT : mm
zPackaging specifications
zinner circuit
Package
Code
Taping
T2R
(6)
(5)
(4)
(1) Base
(Tr1)
(2) Emitter
(3) Emitter
(Tr1)
(Tr2)
Basic ordering
unit (pieces)
8000
Type
Tr2
(4) Collector (Tr2)
(5) Collector (Tr1)
VT6T12
Tr1
(5) Base
(Tr2)
(6) Collector (Tr1)
zAbsolute maximum ratings (Ta=25°C)
(6) Base
(Tr2)
(1)
(2)
(3)
Limits
Symbol
Unit
V
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
−
50
50
−
V
−5
V
I
C
−
100
200
mA
mA
mW
mW
°C
Collector current
∗1
∗2
I
CP
−
Total
Element
150
120
P
D
Power dissipation
T
j
150
Junction temperature
−55 to +150
°C
T
stg
Range of storage temperature
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ. Max.
Unit
V
Conditions
−50
−50
−5
−
−
−
120
−
−
−
−
−
−
−
−
I
I
I
C
= −1mA
C= −50µA
V
V
E
= −50µA
CB= −50V
EB= −5V
I
CBO
EBO
CE(sat)
FE
FE (Tr1) /
−0.1
−0.1
−0.40
560
µA
µA
V
V
V
Emitter cut-off current
I
Collector-emitter saturation voltage
DC current gain
V
I
C
= −50mA, I = −5mA
B
−0.15
−
h
−
V
V
V
V
CE= −6V, I
C= −1mA
DC current gain ratio
Transition frequency
Output capacitance
h
hFE (Tr2) 0.9
−
300
2
1.1
−
−
−
MHz
pF
CE= −6V, I
C= −1mA
f
T
−
−
CE= −10V, I
CB= −10V, I
E
E
=10mA, f=100MHz
=0A, f=1MHz
Cob
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2009.09 - Rev.A
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