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VS-MBRD340PBF PDF预览

VS-MBRD340PBF

更新时间: 2024-11-13 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 140K
描述
DIODE 40 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

VS-MBRD340PBF 技术参数

生命周期:Obsolete零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:490 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-MBRD340PBF 数据手册

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VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
Base  
cathode  
• Popular D-PAK outline  
4, 2  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
3.0 A  
IF(AV)  
VR  
20 V, 30 V, 40 V  
0.49 V  
DESCRIPTION  
VF at IF  
IRM  
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
surface mount Schottky rectifier has been designed for  
applications requiring low forward drop and small foot prints  
on PC boards. Typical applications are in disk drives,  
switching power supplies, converters, freewheeling diodes,  
battery charging, and reverse battery protection.  
20 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
20 to 40  
490  
tp = 5 μs sine  
A
VF  
3 Apk, TJ = 125 °C  
0.49  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
20  
30  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TL = 133 °C, rectangular waveform  
3.0  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
490  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 16 mH  
75  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
8.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 94313  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

VS-MBRD340PBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-MBRD340-M3 VISHAY

完全替代

Popular D-PAK outline

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