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VS-MBRD650CTTRL-M3

更新时间： 2024-09-26 02:49:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 152K
描述
High Performance Schottky Rectifier, 2 x 3 A

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VS-MBRD650CTTRL-M3 数据手册

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VS-MBRD650CT-M3, VS-MBRD660CT-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 3 A  
FEATURES  
• Low forward voltage drop  
Base  
common  
cathode  
4
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular DPAK outline  
• Center tap configuration  
• Small foot print, surface mountable  
• High frequency operation  
2
Common  
cathode  
DPAK (TO-252AA)  
1
3
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Anode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION  
IF(AV)  
2 x 3 A  
50 V, 60 V  
0.65 V  
The VS-MBRD650CT-M3, VS-MBRD660CT-M3 surface  
mount, center tap, Schottky rectifier series has been  
designed for applications requiring low forward drop and  
small foot prints on PC boards. Typical applications are in  
disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
VR  
VF at IF  
I
RM typ.  
15 mA at 125 °C  
150 °C  
TJ max.  
EAS  
6 mJ  
Package  
DPAK (TO-252AA)  
Common cathode  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
6
UNITS  
Rectangular waveform  
A
V
50/60  
490  
tp = 5 μs sine  
A
VF  
3 Apk, TJ = 125 °C (per leg)  
Range  
0.65  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBRD650CT-M3  
50  
VS-MBRD660CT-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
60  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 128 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward  
current  
See fig. 5  
per leg  
3.0  
IF(AV)  
per device  
6
A
Maximum peak one cycle non-repetitive  
surge current  
See fig. 7  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
Following any rated load  
condition and with rated  
490  
75  
6
IFSM  
VRRM applied  
Non-repetitive avalanche energy per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
0.6  
Revision: 07-May-2020  
Document Number: 93325  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-MBRD650CTTRL-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-MBRD650CTTRLPBF VISHAY

功能相似

 DIODE 50 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252

与VS-MBRD650CTTRL-M3相关器件

型号 品牌 获取价格 描述 数据表
VS-MBRD650CTTRLPBF VISHAY

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 		DIODE 50 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252
VS-MBRD650CTTR-M3 VISHAY

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 		DIODE 50 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-MBRD650CTTRR-M3 VISHAY

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 		High Performance Schottky Rectifier, 2 x 3 A
VS-MBRD650CTTRRPBF VISHAY

获取价格

 		DIODE 50 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252
VS-MBRD660CT-M3 VISHAY

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 		High Performance Schottky Rectifier, 2 x 3 A
VS-MBRD660CTPBF VISHAY

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 		DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252
VS-MBRD660CTTRL-M3 VISHAY

获取价格

 		High Performance Schottky Rectifier, 2 x 3 A
VS-MBRD660CTTR-M3 VISHAY

获取价格

 		High Performance Schottky Rectifier, 2 x 3 A
VS-MBRD660CTTRPBF VISHAY

获取价格

 		DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252
VS-MBRD660CTTRR-M3 VISHAY

获取价格

 		DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA

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