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VS-MBRS190-M3 PDF预览

VS-MBRS190-M3

更新时间: 2024-11-14 01:23:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 125K
描述
High Performance Schottky Rectifier

VS-MBRS190-M3 数据手册

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VS-MBRS190-M3, VS-MBRS1100-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 1.0 A  
FEATURES  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMB  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
SMB  
1 A  
DESCRIPTION  
IF(AV)  
The VS-MBRS190-M3, VS-MBRS1100-M3 surface mount  
Schottky rectifier has been designed for applications  
requiring low forward drop and very small foot prints on PC  
boards. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
VR  
90 V, 100 V  
0.78 V  
VF at IF  
IRM  
1 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
90, 100  
870  
tp = 5 μs sine  
1.0 Apk, TJ = 125 °C  
Range  
A
VF  
0.63  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBRS190-M3  
90  
VS-MBRS1100-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 147 °C, rectangular waveform  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
1.0  
5 μs sine or 3 μs rect. pulse  
870  
A
Following any rated load  
condition and with rated  
Maximum peak one cycle  
IFSM  
non-repetitive surge current  
VRRM applied  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
50  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
0.5  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 26-Aug-14  
Document Number: 95744  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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