Datasheet > VS-MBRS130L-M3

VS-MBRS130L-M3

更新时间： 2024-09-26 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	114K
描述
High Performance Schottky Rectifier, 1.0 A

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VS-MBRS130L-M3 数据手册

VS-MBRS130L-M3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 1.0 A

FEATURES

• Small foot print, surface mountable

• Very low forward voltage drop

• High frequency operation

Cathode

Anode

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMB (DO-214AA)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

30 V

DESCRIPTION / APPLICATIONS

V_R

The VS-MBRS130L-M3 surface mount Schottky rectifier

has been designed for applications requiring low forward

drop and small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

V_Fat I_F

0.30 V

_RMmax.

20 mA at 125 °C

125 °C

T_Jmax.

E_AS

3.0 mJ

Package

SMB (DO-214AA)

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.0

UNITS

Rectangular waveform

t_p= 5 μs sine

1.0 A_pk, T_J= 125 °C

Range

230

V_F

0.30

T_J

-55 to +125

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-MBRS130L-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_L= 112 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

I_F(AV)

1.0

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 1 A, L = 6 mH

Following any rated load

condition and with rated

230

Maximum peak one cycle

non-repetitive surge current

I_FSM

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

3.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 30-Jul-2021

Document Number: 95745

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-MBRS130L-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBRS130LTRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S
VS-MBRS130-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 1.0 A
VS-MBRS130-M3/5BT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, SMB, SIMILAR TO DO-214AA, 2 PIN
VS-MBRS140-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 1.0 A
VS-MBRS140-M3/5BT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT
VS-MBRS140TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S
VS-MBRS190-M3	VISHAY	获取价格	High Performance Schottky Rectifier
VS-MBRS190-M3/5BT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 90V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT
VS-MBRS190TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S
VS-MBRS340-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 3.0 A

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