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VS-MBRS1100TRPBF PDF预览

VS-MBRS1100TRPBF

更新时间: 2024-11-13 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
7页 112K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN

VS-MBRS1100TRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.27
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.62 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-MBRS1100TRPBF 数据手册

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VS-MBRS190TRPbF, VS-MBRS1100TRPbF  
Vishay Semiconductors  
Schottky Rectifier, 1.0 A  
FEATURES  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
SMB  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
DO-214AA (SMB)  
1 A  
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface  
mount Schottky rectifier has been designed for applications  
requiring low forward drop and very small foot prints on PC  
boards. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
IF(AV)  
VR  
90 V, 100 V  
0.78 V  
VF at IF  
IRM  
1 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
Single die  
EAS  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
90/100  
870  
tp = 5 μs sine  
1.0 Apk, TJ = 125 °C  
Range  
A
VF  
0.63  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBRS190TRPbF VS-MBRS1100TRPbF  
UNITS  
Maximum DC reverse voltage  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TL = 147 °C, rectangular waveform  
1.0  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
870  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
50  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 94315  
Revision: 05-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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