Datasheet > VS-MBRS1100-M3

VS-MBRS1100-M3

更新时间： 2024-09-26 01:23:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	125K
描述
High Performance Schottky Rectifier

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中文翻译

获取价格

数据手册

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VS-MBRS1100-M3 数据手册

VS-MBRS190-M3, VS-MBRS1100-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 1.0 A

FEATURES

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

Cathode

Anode

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMB

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

Package

SMB

1 A

DESCRIPTION

I_F(AV)

The VS-MBRS190-M3, VS-MBRS1100-M3 surface mount

Schottky rectifier has been designed for applications

requiring low forward drop and very small foot prints on PC

boards. Typical applications are in disk drives, switching

power supplies, converters, freewheeling diodes, battery

charging, and reverse battery protection.

V_R

90 V, 100 V

0.78 V

V_Fat I_F

I_RM

1 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Single die

1.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.0

UNITS

Rectangular waveform

90, 100

870

t_p= 5 μs sine

1.0 A_pk, T_J= 125 °C

Range

V_F

0.63

T_J

-55 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-MBRS190-M3

VS-MBRS1100-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

100

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_L= 147 °C, rectangular waveform

VALUES UNITS

Maximum average forward current

I_F(AV)

1.0

5 μs sine or 3 μs rect. pulse

870

Following any rated load

condition and with rated

Maximum peak one cycle 

I_FSM

non-repetitive surge current

V_RRMapplied

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 0.5 A, L = 8 mH

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

1.0

0.5

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 26-Aug-14

Document Number: 95744

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

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与VS-MBRS1100-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBRS1100-M3/5BT	VISHAY	获取价格	DIODE SCHOTTKY 100V 1A SMB
VS-MBRS1100TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT,
VS-MBRS120TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S
VS-MBRS130L-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 1.0 A
VS-MBRS130LTRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S
VS-MBRS130-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 1.0 A
VS-MBRS130-M3/5BT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, SMB, SIMILAR TO DO-214AA, 2 PIN
VS-MBRS140-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 1.0 A
VS-MBRS140-M3/5BT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT
VS-MBRS140TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, S

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