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VS-MBRD660CTTRRPBF PDF预览

VS-MBRD660CTTRRPBF

更新时间: 2024-11-13 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 143K
描述
DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

VS-MBRD660CTTRRPBF 技术参数

生命周期:Obsolete零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:490 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-MBRD660CTTRRPBF 数据手册

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VS-MBRD650CTPbF, VS-MBRD660CTPbF  
Vishay Semiconductors  
Schottky Rectifier, 2 x 3 A  
FEATURES  
• Popular D-PAK outline  
Base  
common  
cathode  
4
• Center tap configuration  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
2
Common  
cathode  
• Guard ring for enhanced ruggedness and long term  
reliability  
D-PAK (TO-252AA)  
1
3
Anode  
Anode  
• Compliant to RoHS Directive 2002/95/EC  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
2 x 3 A  
IF(AV)  
DESCRIPTION  
VR  
50 V, 60 V  
0.65 V  
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface  
mount, center tap, Schottky rectifier series has been  
designed for applications requiring low forward drop and  
small foot prints on PC boards. Typical applications are in  
disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
VF at IF  
IRM  
15 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
6
UNITS  
Rectangular waveform  
A
V
50/60  
490  
tp = 5 μs sine  
A
VF  
3 Apk, TJ = 125 °C (per leg)  
Range  
0.65  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBRD650CTPbF VS-MBRD660CTPbF  
UNITS  
Maximum DC reverse voltage  
VR  
50  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
3.0  
IF(AV)  
50 % duty cycle at TC = 128 °C, rectangular waveform  
per device  
6
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
490  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
75  
V
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
6
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.6  
Document Number: 94314  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

VS-MBRD660CTTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-MBRD660CTTRR-M3 VISHAY

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DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA

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