Datasheet > VS-8EWX06FNTRL-M3

VS-8EWX06FNTRL-M3

更新时间： 2024-11-02 01:22:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	167K
描述
Hyperfast Rectifier, 8 A FRED PtÂ®

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VS-8EWX06FN-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time, extremely low Q_rr

• 175 °C maximum operating junction temperature

• For PFC CCM operation

2, 4

• Low forward voltage drop

• Low leakage current

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

TO-252AA (D-PAK)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

DESCRIPTION / APPLICATIONS

Package

TO-252AA (D-PAK)

8 A

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

I_F(AV)

V_R

600 V

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

V_Fat I_F

1.4 V

t_rr(typ.)

T_Jmax.

Diode variation

15 ns

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

600

T_C= 140 °C

I_FSM

T_J= 25 °C

I_FM

T_C= 140 °C, f = 20 kHz, d = 50 %

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

600

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

2.3

1.4

3.0

1.7

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Revision: 05-Oct-16

Document Number: 93244

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-8EWX06FNTRL-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-8EWX06FNTR-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWX06FNTRR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS8-L2-B1-H334-00	ASTEC	获取价格	1000 - 2500 Watts
VS8-L2-B1-H334-00	EMERSON-NETWORKPOWER	获取价格	VS Series
VS8-L9-D9-20	EMERSON-NETWORKPOWER	获取价格	VS Series
VS8-L9-D9-20	ASTEC	获取价格	1000 - 2500 Watts
VS-8S2TH06FP	VISHAY	获取价格	Rectifier Diode, 8A, 600V V(RRM),
VS-8TQ060-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 8 A
VS-8TQ060-N3	VISHAY	获取价格	Schottky Rectifier, 8 A
VS-8TQ060PBF	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode

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