Datasheet > VS-8TQ080SPBF

VS-8TQ080SPBF

更新时间： 2024-11-02 01:15:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	156K
描述
Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

VS-8TQ080SPBF 数据手册

VS-8TQ080SPbF, VS-8TQ100SPbF

Vishay High Power Products

Schottky Rectifier, 8 A

FEATURES

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

Base

cathode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

D²PAK

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

PRODUCT SUMMARY

DESCRIPTION

I_F(AV)

8 A

80 V/100 V

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

V_R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

Rectangular waveform

Range

VALUES

UNITS

80/100

850

t_p= 5 μs sine

V_F

8 Apk, T_J= 125 °C

Range

0.58

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-8TQ080SPbF

VS-8TQ100SPbF

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

850

I_FSM

230

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Document Number: 94266

Revision: 15-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

VS-8TQ080SPBF 替代型号

型号	品牌	替代类型	描述	数据表
8TQ080S	VISHAY	功能相似	Schottky Rectifier, 8 A

与VS-8TQ080SPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-8TQ080STRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, D2PAK-3
VS-8TQ080STRRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRR-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/
VS-8TQ100G-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-8TQ100GSPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND
VS-8TQ100GSTRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND
VS-8TQ100-N3	VISHAY	获取价格	Schottky Rectifier

与VS-8TQ080SPBF相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8TQ080SPBF

VS-8TQ080SPBF 数据手册

VS-8TQ080SPBF 替代型号

与VS-8TQ080SPBF相关器件

与VS-8TQ080SPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8TQ080SPBF

VS-8TQ080SPBF 数据手册

VS-8TQ080SPBF 替代型号

与VS-8TQ080SPBF相关器件

与VS-8TQ080SPBF相关文章

您还可以找

您在本页遇到什么问题？