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VS-8TQ100STRRPBF PDF预览

VS-8TQ100STRRPBF

更新时间: 2024-01-24 11:24:04
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 149K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-8TQ100STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66其他特性:FREE WHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:850 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:550 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-8TQ100STRRPBF 数据手册

 浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第2页浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第3页浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第4页浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第5页浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第6页浏览型号VS-8TQ100STRRPBF的Datasheet PDF文件第7页 
VS-8TQ080SPbF, VS-8TQ100SPbF  
Vishay High Power Products  
Schottky Rectifier, 8 A  
FEATURES  
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
Base  
cathode  
2
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
3
1
D2PAK  
N/C  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
8 A  
80 V/100 V  
The VS-8TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
8
UNITS  
A
V
80/100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-8TQ080SPbF  
80  
VS-8TQ100SPbF  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
A
230  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Document Number: 94266  
Revision: 15-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

VS-8TQ100STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
8TQ100STRR VISHAY

完全替代

Schottky Rectifier, 8 A
VS-8TQ100GSTRRPBF VISHAY

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND