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VS-8TQ100GSTRRPBF

更新时间： 2024-11-01 14:28:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 166K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

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VS-8TQ100GSTRRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.38Base Number Matches：1

VS-8TQ100GSTRRPBF 数据手册

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VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 8 A  
FEATURES  
Base  
• 175 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
8 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
80 V, 100 V  
0.58 V  
DESCRIPTION  
VF at IF  
The VS-8TQ...G Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
8 Apk, TJ = 125 °C  
Range  
850  
A
VF  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-8TQ080GPbF  
VS-8TQ080G-N3  
VS-8TQ100GPbF  
VS-8TQ100G-N3  
UNITS  
Maximum DC reverse  
voltage  
VR  
80  
80  
100  
100  
V
Maximum working  
peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
850  
Following any rated load  
condition and with rated  
IFSM  
V
RRM applied  
10 ms sine or 6 ms rect. pulse  
230  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 11-Oct-11  
Document Number: 94263  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-8TQ100GSTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-8TQ100STRRPBF VISHAY

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 Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3

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