Datasheet > VS-8TQ100STRRHM3

VS-8TQ100STRRHM3

更新时间： 2024-01-01 00:00:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	156K
描述
High Performance Schottky Rectifier, 8 A

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数据手册

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VS-8TQ100STRRHM3 数据手册

VS-8TQ080SHM3, VS-8TQ100SHM3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 8 A

FEATURES

Base

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

D²PAK

• Guard ring for enhanced ruggedness and long

term reliability

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRODUCT SUMMARY

• AEC-Q101 qualified meets JESD 201 class 1A whisker

test

I_F(AV)

8 A

V_R

80 V, 100 V

0.58 V

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V_Fat I_F

I_RM

7 mA at 125 °C

175 °C

DESCRIPTION

T_Jmax.

E_AS

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

7.5 mJ

Package

Diode variation

TO-263AB (D²PAK)

Single die

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

80/100

850

t_p= 5 μs sine

8 A_pk, T_J= 125 °C

Range

V_F

0.58

T_J

-55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-8TQ080SHM3

VS-8TQ100SHM3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

100

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current 

See fig. 5

I_F(AV)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

850



I_FSM

230

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Revision: 06-Mar-14

Document Number: 94961

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-8TQ100STRRHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8TQ100STRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3
VS-8TQPBF	VISHAY	获取价格	Schottky Rectifier, 8 A
VS8TRFH-200.000-C-EL	RALTRON	获取价格	Oscillator
VS8TRFL-60.000-C-EL	RALTRON	获取价格	Oscillator
VS8TRGL-60.000-C-EL	RALTRON	获取价格	Oscillator
VS8TRHH-200.000-C-EL	RALTRON	获取价格	Oscillator
VS8TRHH-60.000-C-EL	RALTRON	获取价格	Oscillator
VS8TSFH-200.000-C-EL	RALTRON	获取价格	Oscillator
VS8TSFL-200.000-C-EL	RALTRON	获取价格	Oscillator
VS8TSGH-200.000-C-EL	RALTRON	获取价格	Oscillator

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